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• W1969949998 abstract "In this work, GaN nanowires were fabricated on Si substrates coated with NiCl2 thin films using chemical vapor deposition (CVD) method by evaporating Ga2O3 powder at 1100 °C in ammonia gas flow. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum are used to characterize the samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanowires is also discussed." @default.
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• W1969949998 date "2009-06-01" @default.
• W1969949998 modified "2023-10-18" @default.
• W1969949998 title "Synthesis and characterization of GaN nanowires" @default.
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• W1969949998 doi "https://doi.org/10.1016/j.apsusc.2009.04.147" @default.
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