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- W1969960477 abstract "High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al2O3/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500–3000 cm2 V-1s-1 were achieved after a post-growth annealing in H2 at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 104 was obtained. A brief phenomenological discussion on the gain mechanism is given." @default.
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- W1969960477 date "1983-01-01" @default.
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- W1969960477 title "Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator" @default.
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- W1969960477 doi "https://doi.org/10.1016/0040-6090(83)90429-7" @default.
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