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- W1969969664 abstract "Aim of this work is to investigate the impact of soft breakdown on the main transistor parameters and the recovery of transistor leakage and performance after an annealing treatment. The correlation between soft (SBD) and hard breakdown (HBD) failures is also analysed considering the different impact of a thermal treatment. This treatment does not significantly improve the localised leakage current. On the other hand, the oxide recovery, measured by transistor parameters affected mainly by interface properties, is sufficient to cure the oxide reliability. In order to induce a new SBD event, the percolation path needs to inject the same amount of charge through the oxide, generating the same critical “bulk” and interface defect density of the virgin oxide." @default.
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- W1969969664 date "2004-04-01" @default.
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- W1969969664 title "Soft and hard breakdown: impact of annealing recovery on transistor performances" @default.
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- W1969969664 doi "https://doi.org/10.1016/j.mee.2003.12.008" @default.
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