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- W1969969666 abstract "Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface." @default.
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- W1969969666 date "1996-04-22" @default.
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- W1969969666 title "Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs" @default.
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- W1969969666 doi "https://doi.org/10.1063/1.116151" @default.
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