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- W1969979666 abstract "GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS = 130 mA/mm, gm=135 mS/mm and for 1.3 μm gate length unity current gain cut-off frequency fτ of 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained." @default.
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- W1969979666 date "1990-01-01" @default.
- W1969979666 modified "2023-09-23" @default.
- W1969979666 title "DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique" @default.
- W1969979666 doi "https://doi.org/10.1049/el:19901199" @default.
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