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- W1970059931 abstract "Silicon dioxide thin films were prepared on stainless steel substrates by remote microwave plasma-enhanced chemical vapour deposition (RMPECVD) using an oxygen plasma and a mixture of 5% silane in argon injected in the afterglow. The influence of the process parameters on the film properties was investigated by Fourier transform infrared (FTIR) spectroscopy and electron recoil detection analysis (ERDA). The content of hydrogen was deduced. The electrical insulation was analysed in terms of the dielectric constant, loss factor ( tan δ), resistivity and dielectric strength of the films. An increase in temperature or microwave power leads to a decrease in hydrogen incorporation and improves the insulation properties. Moreover, the use of a radiofrequency (r.f.) substrate bias voltage of 200 V aids the desorption of hydrogen." @default.
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- W1970059931 date "1996-03-01" @default.
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- W1970059931 title "Remote microwave plasma-enhanced chemical vapour deposition of insulating coatings (SiO2) on metallic substrates: film properties" @default.
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