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- W1970090538 abstract "Degradation and recovery behaviors of n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and MOS capacitors are discussed based on the empirical power law. Devices with different gate oxide thicknesses, 10 and 33 nm, are stressed with Fowler-Nordheim (FN) gate current and the changes in subthreshold swing ( S ), drain current ( I D ), transconductance ( G m ), threshold voltage ( V th ), interface trap density ( D it ) above midgap, interface trapped charge ( Q it ) above midgap, and effective oxide charge ( Q 0 ) are measured during and after stressing. All parameters except V th and Q 0 show recovery after degradation. After some stressing conditions, V th and Q 0 show further degradation. It is found that the changes in parameters, during and after stressing, excluding those in V th and Q 0 can be characterized by power laws. The behaviors of V th and Q 0 are more complex, and the change in V th is found to be influenced by changes in both Q 0 and Q it ." @default.
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- W1970090538 date "1991-09-01" @default.
- W1970090538 modified "2023-09-25" @default.
- W1970090538 title "Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current" @default.
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- W1970090538 doi "https://doi.org/10.1143/jjap.30.1931" @default.
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