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- W1970093247 abstract "Shallow (<0.2 μm) n+ layers in Si with high conductivity (<40 Ω/⧠) have been formed by high-dose (2×1016 cm−2) As implants. Experimental observations of As distributions and carrier concentrations are successfully simulated by a computer program which accounts for both the concentration dependent diffusion and As clustering effects. Reduction of electrical carriers in high-dose As implanted Si during moderate temperature (∼800 ° C) heat treatments is readily explained by the kinetics of As clustering. Physical limitations on the conductivity which can be achieved by thermally annealed As implants in Si are also discussed." @default.
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- W1970093247 date "1980-06-01" @default.
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- W1970093247 title "Shallow junctions by high-dose As implants in Si: experiments and modeling" @default.
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- W1970093247 doi "https://doi.org/10.1063/1.328078" @default.
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