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• W1970128049 abstract "We demonstrate the possibility of growing SiGe islands on patterned Si(001) substrates with pits having a continuous variation of the sidewall inclination angle ensuremath{alpha} from ensuremath{alpha} ensuremath{sim} 4ifmmode^circelsetextdegreefi{} to ensuremath{alpha} ensuremath{sim} 54ifmmode^circelsetextdegreefi{}. Experiments show that the pit-inclination angle critically affects island positioning. While for shallow pits (pit-sidewall inclination angle ensuremath{alpha} ensuremath{sim}30ifmmode^circelsetextdegreefi{}) islands are observed solely within the pits, at higher angles islands grow outside the pits. In particular a progressive (complete at ensuremath{alpha} ensuremath{sim} 54ifmmode^circelsetextdegreefi{}) decoration of the pit rim by several islands is observed. We use elasticity theory to compare strain relaxation of a single island inside and outside the pit, as a function of ensuremath{alpha}. The theoretical results show that there exists an elastic driving force for island positioning inside shallow enough pits, which reaches its maximum at ensuremath{alpha} ensuremath{sim} 20ifmmode^circelsetextdegreefi{} and changes sign for ensuremath{alpha} g 40ifmmode^circelsetextdegreefi{}. At the same time, the calculations indicate a progressive relaxation of the wetting layer (WL) outside the pit with increasing ensuremath{alpha}. The consistency between numerical results and experimental observations gives a clear indication on the important role played by the elastic relaxation in this system." @default.
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• W1970128049 date "2011-10-12" @default.
• W1970128049 modified "2023-09-26" @default.
• W1970128049 title "How pit facet inclination drives heteroepitaxial island positioning on patterned substrates" @default.
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• W1970128049 doi "https://doi.org/10.1103/physrevb.84.155415" @default.
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