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- W1970129082 abstract "Using two different secondary ion mass spectrometers we have determined fractional ion yields of Be+ sputtered from seven beryllium-implanted semiconductor matrices (Si, GaAs, AlxGa1−x, InGaAs, and InP) by O+2 bombardment. The measurements were performed at five different impact angles θ ranging from near-normal beam incidence, i.e., θ=2°, to θ=42°. The fractional yields δY+Be show a strong matrix dependent variation (up to a factor of more than 100) as well as a pronounced θ dependence. Even though the two instruments differ considerably with respect to the geometry and the strength of the secondary ion extraction field, the matrix-dependent variations in δY+Be were almost the same for the same θ. On the basis of these findings previously reported discrepancies in the magnitude of the Be matrix effect can be attributed almost completely to the θ dependence of the ionization probability. Moreover, it is shown that a universal relationship between the ion yield δY+ and the matrix sputtering yield Y cannot be established because of functional dependence δY+(Y,θ) is different for each impact angle. Further evidence in this respect is obtained from the Y dependence of the ionization probability of Be+, derived by roughly correcting the measured fractional ion yields for θ-dependent variations in transmission of the employed quadrupole based instrument. A first-order correction to the Be+ matrix effect can be obtained from the O+ intensity measured quasisimultaneously with the Be+ intensity." @default.
- W1970129082 created "2016-06-24" @default.
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- W1970129082 date "1989-06-15" @default.
- W1970129082 modified "2023-10-16" @default.
- W1970129082 title "Effect of matrix composition and impact angle on the fractional ion yield of Be+ sputtered from oxygen-bombarded silicon and compound semiconductors" @default.
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- W1970129082 doi "https://doi.org/10.1063/1.343181" @default.
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