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• W1970147684 abstract "The trapping of charge carriers in Ti-doped Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> (6 nm) stacks on nitrided Si during constant current stress of metal-insulator-semiconductor capacitors has been investigated. Both, the charge buildup on pre-existing traps as well as on traps generated by the stress have been taken into account to explain the observed evolution of the gate voltage during the measurement. The cross section of pre-existing traps has been estimated by applying the first order kinetic model. Two types of neutral trapping sites with cross sections of 2.8·10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and 3.7·10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> were identified to exist simultaneously in each of the four technologically different Ti-doped Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> stacks. One of these traps (σ = 3.7·10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) is inherent for the Ta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> structure itself, while the other one (σ = 2.8·10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) originates from the presence of Ti. Evidences are presented which support the idea that Ti-related center might be neutral complex obtained by coupling Ti-atoms with an oxygen vacancy." @default.
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• W1970147684 date "2012-05-01" @default.
• W1970147684 modified "2023-09-26" @default.
• W1970147684 title "Charge trapping properties in Ti-doped Ta<inf>2</inf>O<inf>5</inf> films on nitrided Si" @default.
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• W1970147684 doi "https://doi.org/10.1109/miel.2012.6222866" @default.
• W1970147684 hasPublicationYear "2012" @default.
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