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- W1970166849 abstract "Dry development process for directed-self assembly lithography (DSAL) hole shrink process has been studied with focus on etch selectivity of poly(methyl methacrylate) (PMMA) to polystyrene (PS) and suppression of etch stop. Highly selective etch of PMMA to PS was achieved using CO gas chemistry. However, it was found that PMMA etching stopped proceeding beyond a certain depth. Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS) analysis indicated that a deposition layer formed not only on PS but also on PMMA. H<sub>2</sub> addition to CO plasma proved effective in controlling the deposition layer thickness and suppressing etch stop. CO/H<sub>2</sub> plasma process combined with ion energy control was applied to the dry development process for hole shrink. DSAL dry development process for hole shrink process was successfully realized by designing the etch gas chemistry and controlling ion energy." @default.
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- W1970166849 date "2014-03-28" @default.
- W1970166849 modified "2023-10-17" @default.
- W1970166849 title "Highly selective etch gas chemistry design for precise DSAL dry development process" @default.
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- W1970166849 doi "https://doi.org/10.1117/12.2046145" @default.
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