Matches in SemOpenAlex for { <https://semopenalex.org/work/W1970268514> ?p ?o ?g. }
Showing items 1 to 68 of
68
with 100 items per page.
- W1970268514 endingPage "130" @default.
- W1970268514 startingPage "125" @default.
- W1970268514 abstract "The Al/ /p-Si Schottky diodes (39 dots) with native interfacial insulator layer SiO<SUB>2 </SUB>were fabricated on the same Si wafer. The current-voltage (<i>I</i>-<i>V</i>) and capacitance-voltage (<i>C</i>-<i>V</i>) characteristics of metal-oxide-semiconductor diodes, which are based on Al/SiO<SUB>2</SUB>/p-Si structures, have been measured at room temperature. Barrier height (BH), ideality factor (<i>n</i>) of these diodes has been calculated from their experimental forward bias current-voltage (I-V), reverse bias capacitance-voltage. Even though they are identically performed on the same quarter Si wafer, the calculated values of BH, which is obtained from <i>I</i>-<i>V</i> characteristic, have ranged from 0.687 to 0.772 eV and ideality factor <i>n</i> from 1.903 to 4.48. The values of barrier heights obtained from <i>C</i>-<i>V</i> characteristics range from 0.629 to 1.097 eV. It was found that the values of barrier height <img src=image/10.5923.j.materials.20120204.05_001.gif></img>obtained <i>C</i>-<i>V</i> characteristics is larger than that of these values from <i>I</i>-<i>V </i>characteristics. The experimental values BH distribution obtained from <i>I</i>-<i>V </i>and <i>C</i><SUP>-2</SUP>-<i>V</i> characteristics have been fitted by Gaussian function and their mean values of BHs have been calculated to be 0.730 and 0.863 respectively. Normal distribution of ideality factors mean value is 3.160 with standard deviation 0.689. Experimental results show that the interface states at a native insulator layer between metal and semiconductor play an important role in the value of the BH, ideality factor and the other electrical parameters of Schottky diodes." @default.
- W1970268514 created "2016-06-24" @default.
- W1970268514 creator A5013157857 @default.
- W1970268514 creator A5019263987 @default.
- W1970268514 creator A5057041529 @default.
- W1970268514 date "2012-08-31" @default.
- W1970268514 modified "2023-09-26" @default.
- W1970268514 title "Gaussian Distribution on Electrical Characteristics of Al/SiO<SUB>2</SUB>/p-Si Structures" @default.
- W1970268514 cites W1648321705 @default.
- W1970268514 cites W1659914018 @default.
- W1970268514 cites W2084792046 @default.
- W1970268514 cites W2492009417 @default.
- W1970268514 cites W3147289055 @default.
- W1970268514 cites W3152039277 @default.
- W1970268514 doi "https://doi.org/10.5923/j.materials.20120204.05" @default.
- W1970268514 hasPublicationYear "2012" @default.
- W1970268514 type Work @default.
- W1970268514 sameAs 1970268514 @default.
- W1970268514 citedByCount "7" @default.
- W1970268514 countsByYear W19702685142016 @default.
- W1970268514 countsByYear W19702685142017 @default.
- W1970268514 countsByYear W19702685142018 @default.
- W1970268514 countsByYear W19702685142021 @default.
- W1970268514 countsByYear W19702685142023 @default.
- W1970268514 crossrefType "journal-article" @default.
- W1970268514 hasAuthorship W1970268514A5013157857 @default.
- W1970268514 hasAuthorship W1970268514A5019263987 @default.
- W1970268514 hasAuthorship W1970268514A5057041529 @default.
- W1970268514 hasBestOaLocation W19702685141 @default.
- W1970268514 hasConcept C113196181 @default.
- W1970268514 hasConcept C160671074 @default.
- W1970268514 hasConcept C16115445 @default.
- W1970268514 hasConcept C185592680 @default.
- W1970268514 hasConcept C192562407 @default.
- W1970268514 hasConcept C205200001 @default.
- W1970268514 hasConcept C43617362 @default.
- W1970268514 hasConcept C49040817 @default.
- W1970268514 hasConcept C78434282 @default.
- W1970268514 hasConceptScore W1970268514C113196181 @default.
- W1970268514 hasConceptScore W1970268514C160671074 @default.
- W1970268514 hasConceptScore W1970268514C16115445 @default.
- W1970268514 hasConceptScore W1970268514C185592680 @default.
- W1970268514 hasConceptScore W1970268514C192562407 @default.
- W1970268514 hasConceptScore W1970268514C205200001 @default.
- W1970268514 hasConceptScore W1970268514C43617362 @default.
- W1970268514 hasConceptScore W1970268514C49040817 @default.
- W1970268514 hasConceptScore W1970268514C78434282 @default.
- W1970268514 hasIssue "4" @default.
- W1970268514 hasLocation W19702685141 @default.
- W1970268514 hasOpenAccess W1970268514 @default.
- W1970268514 hasPrimaryLocation W19702685141 @default.
- W1970268514 hasRelatedWork W1748357669 @default.
- W1970268514 hasRelatedWork W1976058171 @default.
- W1970268514 hasRelatedWork W2012880482 @default.
- W1970268514 hasRelatedWork W2031032950 @default.
- W1970268514 hasRelatedWork W2124223348 @default.
- W1970268514 hasRelatedWork W2170019241 @default.
- W1970268514 hasRelatedWork W2388528534 @default.
- W1970268514 hasRelatedWork W2553137212 @default.
- W1970268514 hasRelatedWork W3106479325 @default.
- W1970268514 hasRelatedWork W3120723223 @default.
- W1970268514 hasVolume "2" @default.
- W1970268514 isParatext "false" @default.
- W1970268514 isRetracted "false" @default.
- W1970268514 magId "1970268514" @default.
- W1970268514 workType "article" @default.
%20with%20native%20interfacial%20insulator%20layer%20SiO%3CSUB%3E2%20%3C%2FSUB%3Ewere%20fabricated%20on%20the%20same%20Si%20wafer.%20The%20current-voltage%20(%3Ci%3EI%3C%2Fi%3E-%3Ci%3EV%3C%2Fi%3E)%20and%20capacitance-voltage%20(%3Ci%3EC%3C%2Fi%3E-%3Ci%3EV%3C%2Fi%3E)%20characteristics%20of%20metal-oxide-semiconductor%20diodes%2C%20which%20are%20based%20on%20Al%2FSiO%3CSUB%3E2%3C%2FSUB%3E%2Fp-Si%20structures%2C%20have%20been%20measured%20at%20room%20temperature.%20Barrier%20height%20(BH)%2C%20ideality%20factor%20(%3Ci%3En%3C%2Fi%3E)%20of%20these%20diodes%20has%20been%20calculated%20from%20their%20experimental%20forward%20bias%20current-voltage%20(I-V)%2C%20reverse%20bias%20capacitance-voltage.%20Even%20though%20they%20are%20identically%20performed%20on%20the%20same%20quarter%20Si%20wafer%2C%20the%20calculated%20values%20of%20BH%2C%20which%20is%20obtained%20from%20%3Ci%3EI%3C%2Fi%3E-%3Ci%3EV%3C%2Fi%3E%20characteristic%2C%20have%20ranged%20from%200.687%20to%200.772%20eV%20and%20ideality%20factor%20%3Ci%3En%3C%2Fi%3E%20from%201.903%20to%204.48.%20The%20values%20of%20barrier%20heights%20obtained%20from%20%3Ci%3EC%3C%2Fi%3E-%3Ci%3EV%3C%2Fi%3E%20characteristics%20range%20from%200.629%20to%201.097%20eV.%20It%20was%20found%20that%20the%20values%20of%20barrier%20height%20%3Cimg%20src%3Dimage%2F10.5923.j.materials.20120204.05_001.gif%3E%3C%2Fimg%3Eobtained%20%3Ci%3EC%3C%2Fi%3E-%3Ci%3EV%3C%2Fi%3E%20characteristics%20is%20larger%20than%20that%20of%20these%20values%20from%20%3Ci%3EI%3C%2Fi%3E-%3Ci%3EV%20%3C%2Fi%3Echaracteristics.%20The%20experimental%20values%20BH%20distribution%20obtained%20from%20%3Ci%3EI%3C%2Fi%3E-%3Ci%3EV%20%3C%2Fi%3Eand%20%3Ci%3EC%3C%2Fi%3E%3CSUP%3E-2%3C%2FSUP%3E-%3Ci%3EV%3C%2Fi%3E%20characteristics%20have%20been%20fitted%20by%20Gaussian%20function%20and%20their%20mean%20values%20of%20BHs%20have%20been%20calculated%20to%20be%200.730%20and%200.863%20respectively.%20Normal%20distribution%20of%20ideality%20factors%20mean%20value%20is%203.160%20with%20standard%20deviation%200.689.%20Experimental%20results%20show%20that%20the%20interface%20states%20at%20a%20native%20insulator%20layer%20between%20metal%20and%20semiconductor%20play%20an%20important%20role%20in%20the%20value%20of%20the%20BH%2C%20ideality%20factor%20and%20the%20other%20electrical%20parameters%20of%20Schottky%20diodes.%22){kind=link}