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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1970274556> ?p ?o ?g. }

• W1970274556 abstract "The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure HfO2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N–Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film." @default.
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• W1970274556 date "2006-05-08" @default.
• W1970274556 modified "2023-10-18" @default.
• W1970274556 title "Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric" @default.
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• W1970274556 doi "https://doi.org/10.1063/1.2202752" @default.
• W1970274556 hasPublicationYear "2006" @default.
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