FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1970311002> ?p ?o ?g. }

• W1970311002 endingPage "97" @default.
• W1970311002 startingPage "92" @default.
• W1970311002 abstract "Capacitors and other passive components within electronic devices can significantly affect the size of electronic devices. To continue decreasing the size of electronics, the miniaturization and potential integration of capacitors require thin film technologies. However, the number of fabrication steps needed for many thin film multilayer capacitor fabrication methods is proportional to the number of active capacitor layers, rendering them cost and time consuming. To overcome this issue, we developed a method using the highly selective etching capability of platinum and ruthenium for the fabrication of multilayer thin film capacitors, resulting in a process which is independent of the number of capacitive layers. To demonstrate the process, one-, two-, and three-layer 2.5 mm × 2.5 mm devices were fabricated using a proof-of-concept silicon oxycarbonitride dielectric grown by plasma-enhanced chemical vapor deposition. The resulting 278 ± 3 pF, 508 ± 5 pF, and 762 ± 5 pF capacitors showed negligible frequency dispersion up to 1 MHz, and had low dissipation factors of ∼0.001 at 10 kHz. As a demonstration of the versatility of the process, devices with thicker dielectric layers (3.5 μm) were also fabricated with a capacitance of 101 ± 2 pF which could achieve up to 640 V before the devices were permanently damaged. The versatility of the process suggests it is a good candidate for the future integration of multilayer capacitors, since it can potentially be fabricated by a variety of deposition methods, and can be formed on two- or three-dimensional substrates." @default.
• W1970311002 created "2016-06-24" @default.
• W1970311002 creator A5011805693 @default.
• W1970311002 creator A5016599778 @default.
• W1970311002 creator A5044545061 @default.
• W1970311002 date "2015-02-01" @default.
• W1970311002 modified "2023-10-18" @default.
• W1970311002 title "Multilayer thin film capacitors by selective etching of Pt and Ru electrodes" @default.
• W1970311002 cites W1711876396 @default.
• W1970311002 cites W1980267374 @default.
• W1970311002 cites W2013871787 @default.
• W1970311002 cites W2021076819 @default.
• W1970311002 cites W2033149879 @default.
• W1970311002 cites W2070878834 @default.
• W1970311002 cites W2072471810 @default.
• W1970311002 cites W2076711199 @default.
• W1970311002 cites W2096770920 @default.
• W1970311002 cites W2118278515 @default.
• W1970311002 cites W2124402727 @default.
• W1970311002 cites W2133939764 @default.
• W1970311002 cites W2140082254 @default.
• W1970311002 cites W2147576627 @default.
• W1970311002 cites W2170518417 @default.
• W1970311002 cites W2334222268 @default.
• W1970311002 cites W2011026420 @default.
• W1970311002 doi "https://doi.org/10.1016/j.mee.2014.12.004" @default.
• W1970311002 hasPublicationYear "2015" @default.
• W1970311002 type Work @default.
• W1970311002 sameAs 1970311002 @default.
• W1970311002 citedByCount "0" @default.
• W1970311002 crossrefType "journal-article" @default.
• W1970311002 hasAuthorship W1970311002A5011805693 @default.
• W1970311002 hasAuthorship W1970311002A5016599778 @default.
• W1970311002 hasAuthorship W1970311002A5044545061 @default.
• W1970311002 hasConcept C100460472 @default.
• W1970311002 hasConcept C119599485 @default.
• W1970311002 hasConcept C127413603 @default.
• W1970311002 hasConcept C133386390 @default.
• W1970311002 hasConcept C136525101 @default.
• W1970311002 hasConcept C138331895 @default.
• W1970311002 hasConcept C142724271 @default.
• W1970311002 hasConcept C147789679 @default.
• W1970311002 hasConcept C165801399 @default.
• W1970311002 hasConcept C171250308 @default.
• W1970311002 hasConcept C17525397 @default.
• W1970311002 hasConcept C185592680 @default.
• W1970311002 hasConcept C19067145 @default.
• W1970311002 hasConcept C192562407 @default.
• W1970311002 hasConcept C204787440 @default.
• W1970311002 hasConcept C206755178 @default.
• W1970311002 hasConcept C2779227376 @default.
• W1970311002 hasConcept C30066665 @default.
• W1970311002 hasConcept C49040817 @default.
• W1970311002 hasConcept C52192207 @default.
• W1970311002 hasConcept C57528182 @default.
• W1970311002 hasConcept C6432897 @default.
• W1970311002 hasConcept C69544855 @default.
• W1970311002 hasConcept C71924100 @default.
• W1970311002 hasConceptScore W1970311002C100460472 @default.
• W1970311002 hasConceptScore W1970311002C119599485 @default.
• W1970311002 hasConceptScore W1970311002C127413603 @default.
• W1970311002 hasConceptScore W1970311002C133386390 @default.
• W1970311002 hasConceptScore W1970311002C136525101 @default.
• W1970311002 hasConceptScore W1970311002C138331895 @default.
• W1970311002 hasConceptScore W1970311002C142724271 @default.
• W1970311002 hasConceptScore W1970311002C147789679 @default.
• W1970311002 hasConceptScore W1970311002C165801399 @default.
• W1970311002 hasConceptScore W1970311002C171250308 @default.
• W1970311002 hasConceptScore W1970311002C17525397 @default.
• W1970311002 hasConceptScore W1970311002C185592680 @default.
• W1970311002 hasConceptScore W1970311002C19067145 @default.
• W1970311002 hasConceptScore W1970311002C192562407 @default.
• W1970311002 hasConceptScore W1970311002C204787440 @default.
• W1970311002 hasConceptScore W1970311002C206755178 @default.
• W1970311002 hasConceptScore W1970311002C2779227376 @default.
• W1970311002 hasConceptScore W1970311002C30066665 @default.
• W1970311002 hasConceptScore W1970311002C49040817 @default.
• W1970311002 hasConceptScore W1970311002C52192207 @default.
• W1970311002 hasConceptScore W1970311002C57528182 @default.
• W1970311002 hasConceptScore W1970311002C6432897 @default.
• W1970311002 hasConceptScore W1970311002C69544855 @default.
• W1970311002 hasConceptScore W1970311002C71924100 @default.
• W1970311002 hasFunder F4320337345 @default.
• W1970311002 hasLocation W19703110021 @default.
• W1970311002 hasOpenAccess W1970311002 @default.
• W1970311002 hasPrimaryLocation W19703110021 @default.
• W1970311002 hasRelatedWork W180127516 @default.
• W1970311002 hasRelatedWork W2074136767 @default.
• W1970311002 hasRelatedWork W2154140536 @default.
• W1970311002 hasRelatedWork W2164607314 @default.
• W1970311002 hasRelatedWork W2888296733 @default.
• W1970311002 hasRelatedWork W2945314527 @default.
• W1970311002 hasRelatedWork W3194005049 @default.
• W1970311002 hasRelatedWork W4253731651 @default.
• W1970311002 hasRelatedWork W4288558685 @default.
• W1970311002 hasRelatedWork W4318984641 @default.
• W1970311002 hasVolume "133" @default.
• W1970311002 isParatext "false" @default.

• next