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- W1970366399 abstract "The charge storage properties of the Metal-Oxide-Metal particles-Oxide-Semiconductor structure, in which charge storage traps are introduced by interposing metal particles between CVD SiO2. and thermally grown SiO2, have been investigated. As metal particles, Pt evaporated by electron beam has been used. The distinct effect of Pt particles on the charge storage properties has been observed, compared to the properties of the Metal-Oxide-Oxide-Semiconductor structure. The amount of the flat-band voltage shift and the retention time are changed with the heat treatment condition in the O2 atmosphere after the CVD SiO2 deposition upon metal particles. This is explained by the growth of SiO2 on Si by the heat treatment in O2, which is clarified by structural analysis by means of Auger electron spectroscopy." @default.
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- W1970366399 date "1977-03-01" @default.
- W1970366399 modified "2023-09-27" @default.
- W1970366399 title "Effect of Platinum Particles in Dual SiO2Interface on Charge Storage Properties" @default.
- W1970366399 cites W2135801859 @default.
- W1970366399 doi "https://doi.org/10.1143/jjap.16.441" @default.
- W1970366399 hasPublicationYear "1977" @default.
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