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- W1970403457 abstract "Through the experimentally validated inversion-layer mobility simulation, we devise an error-free version of Matthiessen's rule for a single-gate n-channel bulk MOSFET in the universal mobility region. The core of the new rule lies in a semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen's rule as a function of both the lowest subband population and the relative strength of individual mobility components. The model holds under practical conditions (with temperatures up to 400 K) and in a broad range of substrate doping concentrations (10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sup> to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> ). To make the error-free proposal more general, we elaborate on several issues, including strain, impurity Coulomb scattering, and remote scattering. The thin-film case can be treated accordingly." @default.
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- W1970403457 date "2013-02-01" @default.
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- W1970403457 title "Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region" @default.
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- W1970403457 doi "https://doi.org/10.1109/ted.2012.2233202" @default.
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