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- W1970405203 abstract "AlN thin films, 326–366 nm thick, were deposited by reactive d.c. magnetron sputtering on glass and monocrystal KCl substrates. The deposition parameters (nitrogen partial pressure, total sputtering pressure, discharge voltage and deposition time) were correlated and their influences on the structural and optical properties of the films were determined by means of X-ray diffraction, scanning electron microscopy and spectrophotometry. The experimental results confirmed the polycrystalline hexagonal wurtzite structure of AlN thin films. The c-axis orientation increase with decreasing of N2 concentration. The deposited AlN films at lower N2 partial pressure possess better optical constants—;higher value of refractive index and lower value of coefficient of extinction. All the deposition films are transparent in the visible region with average transmittance about 83%." @default.
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- W1970405203 date "1998-03-01" @default.
- W1970405203 modified "2023-09-23" @default.
- W1970405203 title "Study of reactive DC magnetron sputtering deposition of AlN thin films" @default.
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- W1970405203 doi "https://doi.org/10.1016/s0042-207x(97)00128-0" @default.
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