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• W1970548051 abstract "A series of recent experimental results show that carbon is a more suitable acceptor for GaAs than beryllium. One reason for this is the capability of ultra-high doping up to 1×1021 cm−3 with carbon. However, the lattice constant significantly decreases with increasing hole concentration at such high doping levels. To solve the lattice-mismatch problem at the interface between heavily carbon-doped Gaas and moderately-doped or SI GaAs, we have grown heavily carbon-doped InGaAs lattice-matched to SI GaAs by metalorganic molecular beam epitaxy (MOMBE). Hall and X-ray diffraction measurements were performed to study the carrier concentrations and the lattice constants, respectively, of the heavily carbon-doped InGaAs with various In contents both before and after annealing." @default.
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• W1970548051 date "1991-05-01" @default.
• W1970548051 modified "2023-10-16" @default.
• W1970548051 title "MOMBE growth and characterization of heavily carbon-doped InGaAs" @default.
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• W1970548051 doi "https://doi.org/10.1016/0022-0248(91)91044-b" @default.
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