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• W1970655704 abstract "The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and {10–11}-oriented semi-polar facets." @default.
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• W1970655704 date "2014-11-14" @default.
• W1970655704 modified "2023-10-17" @default.
• W1970655704 title "Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes" @default.
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• W1970655704 doi "https://doi.org/10.1063/1.4901828" @default.
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