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• W1970737199 abstract "We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS2) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS2 and IZO, the n-type behavior with a field-effect mobility (μeff) of 1.4 cm2 V−1 s−1 was observed in as-fabricated transparent MoS2 TFT. In order to enhance the performances of transparent MoS2 TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, μeff increased to 4.5 cm2 V−1 s−1, and the on-off current ratio (Ion/Ioff) increased to 104, which were attributed to the reduction of the contact resistance between MoS2 and IZO." @default.
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• W1970737199 date "2014-12-30" @default.
• W1970737199 modified "2023-10-18" @default.
• W1970737199 title "Optically transparent thin-film transistors based on 2D multilayer MoS₂and indium zinc oxide electrodes" @default.
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• W1970737199 doi "https://doi.org/10.1088/0957-4484/26/3/035202" @default.
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