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- W1970756123 abstract "In order to good interpret the experimentally observed non-ideal Al/SnO2/p-Si (MIS) Schottky diode parameters such as the barrier height ΦB, series resistance Rs and density of interface states Nss, a calculation method has been reported by taking into account interfacial oxide layer and ideality factor n in the current transport mechanism. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of MIS diodes are studied over a wide temperature range of 80–350 K. The effects of Rs, interfacial layer and Nss on I–V and C–V characteristics are investigated. The values of n were strongly temperature dependent and decreased with increasing temperature. The energy distribution of Nss was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. The mean Nss estimated from I–V and C–V measurements decreased with increasing temperature. The Rs estimated from Cheung’s functions was strongly temperature dependent and decreased with increasing temperature. The I–V characteristics confirmed that the distribution of Nss, Rs and interfacial layer are important parameters that influence the electrical characteristics of MIS devices." @default.
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- W1970756123 date "2003-10-01" @default.
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- W1970756123 title "The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes" @default.
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- W1970756123 doi "https://doi.org/10.1016/s0038-1101(03)00182-5" @default.
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