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• W1970781525 abstract "We study the carrier relaxation dynamics in Ga1−yIny N0.03As0.97 layers grown on InP substrate by molecular beam epitaxy. This dilute nitride semiconductor is a potential candidate for ultrafast components such as photoconductive terahertz devices driven at 1.55 μm wavelength. Carrier lifetimes are measured by pump-probe experiments at 1550 nm wavelength and the shortest carrier lifetime is 2.6 ps under photoexcitation with ∼4.2 μJ/cm2. We observe two contributions in the differential transmittance decay. These contributions are discussed in terms of photocarrier recombination processes." @default.
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• W1970781525 date "2011-10-03" @default.
• W1970781525 modified "2023-09-24" @default.
• W1970781525 title "Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate" @default.
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• W1970781525 doi "https://doi.org/10.1063/1.3644954" @default.
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