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- W1970806089 abstract "The annihilation characteristics of positrons in SiO 2 films grown on Si substrates were studied by usine monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO 2 /Si structures fabricated by various oxidation techniques. From the measurements, it was found that the formation probability of positronium (Ps) atoms in SiO 2 films strongly depends on the growth condition of SiO 2 films. The present investigation shows that positrons provide a sensitive and nondestructive probe for the characterization of SiO 2 films grown on Si substrates" @default.
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- W1970806089 date "1995-01-01" @default.
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- W1970806089 title "Positron Studies of Oxide-Semiconductor Structures" @default.
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- W1970806089 doi "https://doi.org/10.1051/jp4:1995105" @default.
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