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- W1970897777 abstract "Abstract Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C." @default.
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- W1970897777 date "2012-08-01" @default.
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- W1970897777 title "Effect of SiO2 passivation overlayers on hillock formation in Al thin films" @default.
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- W1970897777 doi "https://doi.org/10.1016/j.tsf.2012.07.023" @default.
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