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- W1970942004 abstract "The zero-bias resistance and high frequency capacitance of Al- and Pd-gated thin-oxide metal-oxide-semiconductor diodes have been measured as a function of temperature. The temperature dependence of the semiconductor barrier height is found to be large, primarily due to inversion effects. The relatively low activation energies observed for the zero-bias resistance, as well as actual measurements of spatial variations in device current, strongly suggest the presence of large variations in the semiconductor band bending. These variations may be directly related to thickness nonuniformities which are known to occur in SiO2 films processed at low temperatures." @default.
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- W1970942004 title "Equilibrium properties of thin-oxide metal-oxide-semiconductor diodes" @default.
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- W1970942004 doi "https://doi.org/10.1063/1.337166" @default.
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