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- W1970952335 abstract "The incorporation of either vacancies or self-interstitials into growing crystal is controlled by the V/G ratio (V is the growth rate and G is the near-interface temperature gradient). The critical value of V/G for the change-over from interstitial to vacancy incorporation is generally sensitive to the presence of impurities. The most straightforward impurity effect is a shift in the equilibrium concentrations of defects at the melting point induced by a shift in the Fermi level or by lattice strain; the latter effect is however negligible for conventional dopant concentration. Particularly, the well-known boron effect on (V/G)cr can be attributed entirely to a Fermi level shift. Some neutral impurities also affect (V/G)cr. Such phenomena indicate to impurity reactions with intrinsic point defects and particularly, to transitions between substitutional and interstitial states of impurity atoms." @default.
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- W1970952335 date "2001-05-01" @default.
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- W1970952335 title "Effect of doping on point defect incorporation during silicon growth" @default.
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