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- W1970980112 abstract "본 논문에서는 와이브로 기지국 시스템을 위한 고전력 PIN 다이오드 스위치와 고속 스위치 구동회로에 대한 설계와 측정 결과를 제공한다. 일반적인 전력용 팩키지 다이오드의 기생 인덕턴스에 의한 격리도 열화를 막고 다이오드 스위치의 전력 능력을 향상시키기 위해 칩 형태의 다이오드를 사용하였으며, 본딩 와이어에 의한 직렬 인덕턴스는 전송선로의 임피던스에 쉽게 흡수될 수 있도록 회로를 구성하였다. 구현된 스위치 모듈은 사용된 다이오드의 개수를 최대한 줄이면서 최대의 성능을 얻을 수 있도록 설계되었으며 2.35 GHz에서 써큘레이터의 손실을 포함하여 약 0.84 dB의 삽입 손실과 80 dB 이상의 격리도 특성을 보였다. 또한 TTL 신호를 통한 스위치 모듈의 제어를 위해 스위치 구동회로를 설계, 제작하였으며 스위칭 속도는 200 nsec로 측정되었다. 스위치 모듈은 디지털 변조된 고전력 신호에 의해 전력능력이 시험되었으며 70 W의 전력이 인가되는 경우에도 정상적으로 동작하는 특성을 보여주었다. In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of <TEX>${sim}0.84;dB$</TEX> and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of <TEX>${sim}200;nsec$</TEX>. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress." @default.
- W1970980112 created "2016-06-24" @default.
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- W1970980112 date "2007-04-30" @default.
- W1970980112 modified "2023-09-26" @default.
- W1970980112 title "Implementation of High-Power PM Diode Switch Modules and High-Speed Switch Driver Circuits for Wibro Base Stations" @default.
- W1970980112 cites W2040475147 @default.
- W1970980112 doi "https://doi.org/10.5515/kjkiees.2007.18.4.364" @default.
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