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- W1971003356 abstract "Silicon surface structures with excellent antireflection property arouse wide interest. Chemical and physical methods such as femtosecond, nanosecond, and picosecond laser processing, wet-chemical etching, electrochemical etching, and reactive ion etching have been developed to fabricate them. However, the methods can only produce a quasi-ordered array of sharp conical microspikes on silicon surface. In this paper, we present a method to fabricate periodic silicon antireflection surface structures using direct four-beam laser interference lithography (LIL). With 1 atm ambient atmosphere of SF6 and the laser fluence of the four beams irradiated on the silicon surface at 0.64 J cm−2, the periodical conical spikes were generated. Changing the polarization directions of the opposite incident beam pairs in a four-beam LIL system could convert conical spikes structure into an array of holes. Antireflection in a wide spectral range was measured by a spectrophotometer from ultraviolet to near-infrared. The average reflectance of this periodic black silicon surface is less than 3.5%." @default.
- W1971003356 created "2016-06-24" @default.
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- W1971003356 date "2013-12-31" @default.
- W1971003356 modified "2023-10-02" @default.
- W1971003356 title "Periodic antireflection surface structure fabricated on silicon by four-beam laser interference lithography" @default.
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- W1971003356 doi "https://doi.org/10.2351/1.4849715" @default.
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