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• W1971062654 abstract "Neodymium and manganese-doped BiFeO 3 — (Bi 0.95 Nd 0.05 )(Fe 0.95 Mn 0.05 )O 3 (BNFMO) ferroelectric film and HfO 2 layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition (ALD) method, respectively. Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 200 nm thick BNFMO and 5 nm thick HfO 2 layer on silicon substrate have been prepared and characterized. It is found that there is no distinct interdiffusion and reaction occurring at the interface between BNFMO/HfO 2 and HfO 2 /Si . The capacitance–voltage (C–V) and leakage current properties of Pt/HfO 2 /Si capacitors with different HfO 2 thickness were studied. The MFIS structure showed clockwise C–V hysteresis loops due to the ferroelectric polarization of BNFMO . The maximum memory window is 5 V. The leakage current of the Pt/BNFMO/HfO 2 /Si capacitor was about 2.1 × 10 -6 A/cm 2 at an applied voltage of 4 V." @default.
• W1971062654 created "2016-06-24" @default.
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• W1971062654 date "2011-07-01" @default.
• W1971062654 modified "2023-09-26" @default.
• W1971062654 title "ATOMIC LAYER DEPOSITION <font>HfO₂</font> FILM USED AS BUFFER LAYER OF THE <font>Pt/(Bi_0.95Nd_0.05)(Fe_0.95Mn_0.05)O₃/HfO₂/Si</font> CAPACITORS FOR FeFET APPLICATION" @default.
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• W1971062654 doi "https://doi.org/10.1142/s2010135x11000458" @default.
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