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- W1971083735 abstract "The authors report on InGaN microcavity light-emitting diodes with an effective thickness of ∼450nm at the emission wavelength of ∼415nm. The starting material for the flip-chip laser lift-off device is a structure with an active region embedding six InGaN∕GaN quantum wells, ∼60-nm-thick AlGaN, and a GaN template grown on a c-plane sapphire substrate. High-precision control of the final microcavity thickness was facilitated by SF6-based selective inductively coupled plasma etching on the flipped material with an etch rate of ⩾5:1 for GaN:AlxGa1−xN, where x⩾0.15. Pronounced microcavity effects were observed by angular measurements, in agreement with the theoretical cavity-mode dispersion characteristics." @default.
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- W1971083735 date "2007-08-06" @default.
- W1971083735 modified "2023-10-16" @default.
- W1971083735 title "2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process" @default.
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- W1971083735 doi "https://doi.org/10.1063/1.2769397" @default.
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