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• W1971155328 abstract "Abstract By extracting and eliminating the geometric component from the charge pumping current (ICP) in on-the-fly oxide trap method (OTFOT), we have been able to demonstrate that both interface (ΔNit) and deep hole oxide traps ( Δ N ot D ) induced by the negative bias temperature instability (NBTI) are principally located in the lightly doped drain region (LDD region) and they do not show any noticeable increase with stress time in the effective channel region. However, we have shown that the shallow hole oxide traps ( Δ N ot S ) induced by NBTI are created in the whole of the channel." @default.
• W1971155328 created "2016-06-24" @default.
• W1971155328 creator A5043872918 @default.
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• W1971155328 date "2014-05-01" @default.
• W1971155328 modified "2023-09-25" @default.
• W1971155328 title "Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique" @default.
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• W1971155328 doi "https://doi.org/10.1016/j.microrel.2014.01.010" @default.
• W1971155328 hasPublicationYear "2014" @default.
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