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• W1971281710 abstract "The elementary processes associated with electron beam-induced deposition (EBID) and post-deposition treatment of structures created from three metalII(hfac)2 organometallic precursors (metal = Pt, Pd, Cu; hfac = CF3C(O)CHC(O)CF3) have been studied using surface analytical techniques. Electron induced reactions of adsorbed metalII(hfac)2 molecules proceeds in two stages. For comparatively low electron doses (doses <1 × 1017 e–/cm2) decomposition of the parent molecules leads to loss of carbon and oxygen, principally through the formation of carbon monoxide. Fluorine and hydrogen atoms are also lost by electron stimulated C–F and C–H bond cleavage, respectively. Collectively, these processes are responsible for the loss of a significant fraction (≥50%) of the oxygen and fluorine atoms, although most (>80%) of the carbon atoms remain. As a result of these various transformations the reduced metal atoms become encased in an organic matrix that is stabilized toward further electron stimulated carbon or oxygen loss, although fluorine and hydrogen can still desorb in the second stage of the reaction under the influence of sustained electron irradiation as a result of C–F and C–H bond cleavage, respectively. This reaction sequence explains why EBID structures created from metalII(hfac)2 precursors in electron microscopes contain reduced metal atoms embedded within an oxygen-containing carbonaceous matrix. Except for the formation of copper fluoride from CuII(hfac)2, because of secondary reactions between partially reduced copper atoms and fluoride ions, the chemical composition of EBID films and behavior of metalII(hfac)2 precursors was independent of the transition metal’s chemical identity. Annealing studies of EBID structures created from PtII(hfac)2 suggest that the metallic character of deposited Pt atoms could be increased by using post deposition annealing or elevated substrate temperatures (>25 °C) during deposition. By exposing EBID structures created from CuII(hfac)2 to atomic oxygen followed by atomic hydrogen, organic contaminants could be abated without annealing." @default.
• W1971281710 created "2016-06-24" @default.
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• W1971281710 date "2014-05-12" @default.
• W1971281710 modified "2023-09-30" @default.
• W1971281710 title "Electron Induced Surface Reactions of Organometallic Metal(hfac)2 Precursors and Deposit Purification" @default.
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• W1971281710 doi "https://doi.org/10.1021/am501457h" @default.
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