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- W1971292934 abstract "Classical ionized impurity scattering is employed to calculate the conductivity at and near the critical point. The result σ(x=xc,T)=A√T is nearly universal, A is weakly dependent on the form of the density-of-states above the mobility edge, and can explain the √T term observed for amorphous semiconductor–metal alloys. The result is compared with the Altshuler–Aronov correction δσD=m(n)√T resulting from electron–electron interactions. σ(x>xc,T) can also explain the linear scaling behavior σ(x,T)−A√T=σ0(x/xc−1)." @default.
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- W1971292934 date "2000-07-01" @default.
- W1971292934 modified "2023-09-27" @default.
- W1971292934 title "Critical conductivity for semiconductor–metal alloys" @default.
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- W1971292934 doi "https://doi.org/10.1016/s0921-4526(99)02887-2" @default.
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