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- W1971295556 endingPage "1226" @default.
- W1971295556 startingPage "1221" @default.
- W1971295556 abstract "Abstract Electrical characteristics of epitaxial layers which are supplied by three manufacturers for molecular beam epitaxy (MBE) grown wafers and two manufacturers for metal organic chemical vapor deposition (MOCVD) grown wafers are analyzed. There are remarkable differences in the electrical characteristics between the MBE grown epitaxial-layers and the MOCVD grown ones. The heterojunction field effect transistors (HJFETs) fabricated by MBE show a large side-gating effect, while those fabricated by MOCVD have high threshold voltages for side-gating effect. The HJFETs fabricated by both methods have frequency dispersion in drain conductance ( G ds ). The activation energies of the associated deep levels are estimated at 0.34 eV for MBE and 0.73 eV for MOCVD. Diodes with n n layers, in which the growth is interrupted and the interface is air contaminated, show electron depletion and Fermi level pinning at the interface for the MBE wafers, while almost no peculiar effect at around the interface for the MOCVD wafers. Secondary ion-mass spectroscopy (SIMS) analysis indicate a large amount of oxygen and carbon contamination in the MBE wafers, while these impurities are under the detection limit in the MOCVD wafers. These results indicate that the interfaces formed by MBE contain deep levels of oxygen and shallow carbon acceptors, which cause G ds frequency dispersion and the side-gating effect, respectively. On the other hand, there is no substantial contamination in the MOCVD wafers, while G ds dispersion appearing in the MOCVD FETs can be attributed to the EL2 substrate deep level. These results indicate that there exist a large difference in the susceptibility to the surface cleaning between two technologies." @default.
- W1971295556 created "2016-06-24" @default.
- W1971295556 creator A5004526228 @default.
- W1971295556 creator A5013894623 @default.
- W1971295556 creator A5028245826 @default.
- W1971295556 creator A5048924114 @default.
- W1971295556 date "1995-06-01" @default.
- W1971295556 modified "2023-10-02" @default.
- W1971295556 title "Differences in epitaxial-layer/substrate interface properties of hetero-junction field effect transistors fabricated by molecular beam epitaxy and metal organic chemical vapor deposition" @default.
- W1971295556 cites W1502025202 @default.
- W1971295556 cites W1975437685 @default.
- W1971295556 cites W1994613773 @default.
- W1971295556 cites W1999124302 @default.
- W1971295556 cites W1999801657 @default.
- W1971295556 cites W2067246517 @default.
- W1971295556 cites W2069565490 @default.
- W1971295556 cites W2072852548 @default.
- W1971295556 cites W2101488206 @default.
- W1971295556 cites W2105829108 @default.
- W1971295556 doi "https://doi.org/10.1016/0038-1101(94)00224-4" @default.
- W1971295556 hasPublicationYear "1995" @default.
- W1971295556 type Work @default.
- W1971295556 sameAs 1971295556 @default.
- W1971295556 citedByCount "6" @default.
- W1971295556 crossrefType "journal-article" @default.
- W1971295556 hasAuthorship W1971295556A5004526228 @default.
- W1971295556 hasAuthorship W1971295556A5013894623 @default.
- W1971295556 hasAuthorship W1971295556A5028245826 @default.
- W1971295556 hasAuthorship W1971295556A5048924114 @default.
- W1971295556 hasConcept C110738630 @default.
- W1971295556 hasConcept C111368507 @default.
- W1971295556 hasConcept C119599485 @default.
- W1971295556 hasConcept C127313418 @default.
- W1971295556 hasConcept C127413603 @default.
- W1971295556 hasConcept C145598152 @default.
- W1971295556 hasConcept C151730666 @default.
- W1971295556 hasConcept C165801399 @default.
- W1971295556 hasConcept C171250308 @default.
- W1971295556 hasConcept C172385210 @default.
- W1971295556 hasConcept C191897082 @default.
- W1971295556 hasConcept C192562407 @default.
- W1971295556 hasConcept C2777289219 @default.
- W1971295556 hasConcept C2779227376 @default.
- W1971295556 hasConcept C2816523 @default.
- W1971295556 hasConcept C3792809 @default.
- W1971295556 hasConcept C49040817 @default.
- W1971295556 hasConcept C544153396 @default.
- W1971295556 hasConcept C57410435 @default.
- W1971295556 hasConcept C64297162 @default.
- W1971295556 hasConcept C86803240 @default.
- W1971295556 hasConceptScore W1971295556C110738630 @default.
- W1971295556 hasConceptScore W1971295556C111368507 @default.
- W1971295556 hasConceptScore W1971295556C119599485 @default.
- W1971295556 hasConceptScore W1971295556C127313418 @default.
- W1971295556 hasConceptScore W1971295556C127413603 @default.
- W1971295556 hasConceptScore W1971295556C145598152 @default.
- W1971295556 hasConceptScore W1971295556C151730666 @default.
- W1971295556 hasConceptScore W1971295556C165801399 @default.
- W1971295556 hasConceptScore W1971295556C171250308 @default.
- W1971295556 hasConceptScore W1971295556C172385210 @default.
- W1971295556 hasConceptScore W1971295556C191897082 @default.
- W1971295556 hasConceptScore W1971295556C192562407 @default.
- W1971295556 hasConceptScore W1971295556C2777289219 @default.
- W1971295556 hasConceptScore W1971295556C2779227376 @default.
- W1971295556 hasConceptScore W1971295556C2816523 @default.
- W1971295556 hasConceptScore W1971295556C3792809 @default.
- W1971295556 hasConceptScore W1971295556C49040817 @default.
- W1971295556 hasConceptScore W1971295556C544153396 @default.
- W1971295556 hasConceptScore W1971295556C57410435 @default.
- W1971295556 hasConceptScore W1971295556C64297162 @default.
- W1971295556 hasConceptScore W1971295556C86803240 @default.
- W1971295556 hasIssue "6" @default.
- W1971295556 hasLocation W19712955561 @default.
- W1971295556 hasOpenAccess W1971295556 @default.
- W1971295556 hasPrimaryLocation W19712955561 @default.
- W1971295556 hasRelatedWork W1967700388 @default.
- W1971295556 hasRelatedWork W1980348443 @default.
- W1971295556 hasRelatedWork W1999444743 @default.
- W1971295556 hasRelatedWork W2055754760 @default.
- W1971295556 hasRelatedWork W2065223769 @default.
- W1971295556 hasRelatedWork W2091934482 @default.
- W1971295556 hasRelatedWork W2110439538 @default.
- W1971295556 hasRelatedWork W2139871202 @default.
- W1971295556 hasRelatedWork W2914704993 @default.
- W1971295556 hasRelatedWork W3195870230 @default.
- W1971295556 hasVolume "38" @default.
- W1971295556 isParatext "false" @default.
- W1971295556 isRetracted "false" @default.
- W1971295556 magId "1971295556" @default.
- W1971295556 workType "article" @default.