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- W1971304756 abstract "A combination of complex surface capacitance mapping and sheet resistance mapping is applied to establish the origin of resistance variations on semi-insulating (SI) 6H–SiC substrates. The direct correlation between the capacitance quadrature and the sheet resistance is found in vanadium-doped SI samples. Regions with low capacitance quadrature show high sheet resistance. This indicates, associated with the nonhomogeneity of sheet resistance on the substrate, that the quality of crystallization is not good enough, which also leads to resistivity nonhomogeneity when comparing with different types of deep defects. According to the capacitance mapping, the region with bad crystallization quality has a high radio absorption coefficient. Another correlation is established between the capacitance in-phase and sheet resistance for the vanadium-doped sample. In this sample, the capacitance in-phase map shows not only the surface topography, but also the same distribution trend as the sheet resistance, namely, regions of high capacitance in-phase reveal high sheet resistance." @default.
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- W1971304756 date "2010-01-01" @default.
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- W1971304756 title "The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H–SiC" @default.
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- W1971304756 doi "https://doi.org/10.1016/j.jallcom.2009.07.070" @default.
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