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- W1971357751 abstract "Several factors affecting the surface morphology, transformation characteristics and shape recovery of co-sputtered NiTi-based shape memory alloy thin films were investigated. It is found that the Ar gas pressure, substrate orientation, deposition temperature and annealing condition all affect the surface morphology. In particular, when under high Argon gas pressure, the deposited film contains surface cracks, while the film is smooth and dense if a 2.3mTorr Argon gas pressure was used during deposition. The film deposited at 450°C on a (100) Si substrate has a rough surface associated with a large distribution of island sizes. Post-annealing treatment leads to a more homogeneous distribution of island dimensions and a smoother surface. On the other hand, the films deposited at 450°C on a (111) Si substrate or on a SiO<sub>2</sub> buffer layer have more homogeneous island sizes. It is also found that both the substrate orientation and the SiO<sub>2</sub> buffer layer dramatically affect the transformation behavior and shape recovery magnitude. Film deposited on (100) Si has a higher recovery strain than that deposited on (111) Si under the same stress. The oxygen in SiO<sub>2 </sub>buffer layer may have deteriorated the deposited film, which results in a very low shape recovery strain. Interfacial stress between the substrate and the thin films is found to lower the transformation hysteresis." @default.
- W1971357751 created "2016-06-24" @default.
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- W1971357751 date "2002-11-01" @default.
- W1971357751 modified "2023-09-25" @default.
- W1971357751 title "Some factors affecting the properties of sputter deposited NiTi-based shape memory alloy thin films" @default.
- W1971357751 cites W1987912177 @default.
- W1971357751 doi "https://doi.org/10.1117/12.468642" @default.
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