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- W1971358160 abstract "A novel liquid Zr precursor with a donor-functionalized alkoxy ligand has been characterized by thermogravimetry (TG) and differential scanning calorimetry (DSC) analysis, nuclear magnetic resonance, and mass spectrometry. vaporizes near 320°C and reacts with oxygen at around 310°C under our TG/DSC measurement conditions. The bond strength of Zr-dmae was found to be similar to that of The thin films deposited at 300-480°C by a direct liquid injection metallorganic chemical vapor deposition process had a dense and smooth morphology. The film had a weak monoclinic phase in an amorphous background without any other metastable phase such as tetragonal or cubic. The high-frequency (1 MHz) capacitance-voltage curves showed that the flatband voltage of the thin films deposited at 400°C was close to the theoretical value of −0.9 V. The interface trap density near the midgap was found to be less than which was calculated by the Terman method. © 2001 The Electrochemical Society. All rights reserved." @default.
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- W1971358160 date "2002-01-01" @default.
- W1971358160 modified "2023-10-16" @default.
- W1971358160 title "Direct Liquid Injection Metallorganic Chemical Vapor Deposition of ZrO[sub 2] Thin Films Using Zr(dmae)[sub 4] as a Novel Precursor" @default.
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- W1971358160 doi "https://doi.org/10.1149/1.1421605" @default.
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