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- W1971376836 abstract "The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses." @default.
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- W1971376836 date "2012-02-09" @default.
- W1971376836 modified "2023-09-30" @default.
- W1971376836 title "Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon" @default.
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- W1971376836 doi "https://doi.org/10.1088/0953-8984/24/9/095401" @default.
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