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- W1971386788 abstract "High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vapor deposition at low temperature (325 °C) and pressure (30 Torr), using dimethylzinc and hydrogen selenide. All layers were unintentionally doped n type with net carrier concentrations of 6.4×1014–1.5×1016 cm−3 and exhibited very high mobility at room temperature (up to 500 cm2/V s) as well as at 77 K, where the measured value of 9250 cm2/V s is the highest so far reported for vapor phase growth. Additional evidence for the high quality of the material is provided by photoluminescence. Experimental results indicate a correlation between the photoluminescence characteristics and the electrical properties that may be useful in assessing the quality of ZnSe films." @default.
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- W1971386788 date "1989-01-23" @default.
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- W1971386788 title "High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics" @default.
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- W1971386788 doi "https://doi.org/10.1063/1.100967" @default.
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