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• W1971444218 abstract "Surface modification resist process (SMR), which gives negative-tone image owing to the polysiloxane formation on exposed resist surface using chemical vapor deposition (CVD), was studied for ArF excimer laser lithography. The selective polysiloxane formation is based on the hycbolysis of alkoxysilane and subsequent condensation in the presence of a photo-induced acid catalyst and sorbed water. We have developed the photoacid generating polymer with a polarity change unit for 0.13μm pattern fabrication. We solved a pattern degradation problem in the dry development by introchcing the thermally stable alicyclic unit to this polymer system, and achieved 0.13μm patterns with steep wall profile. Furthermore, we investigated the effect of the water vapor treatment, by which the water was sorbed in the exposed region before CVD. The resolution was improved by adjusting the water vapor treatment time. In the case of too long treatment time, the resolution was degraded by the diffusion of the sorbed water into the unexposed region." @default.
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• W1971444218 date "1998-01-01" @default.
• W1971444218 modified "2023-10-02" @default.
• W1971444218 title "Advanced Surface Modification Resist Process for ArF Lithography." @default.
• W1971444218 doi "https://doi.org/10.2494/photopolymer.11.645" @default.
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