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- W1971466561 abstract "A high-performing photodetector was achieved by nanoscale three-dimensional (3D) structures. Optically transparent and electrically conductive indium–tin–oxide (ITO) was periodically patterned onto a Si substrate by a nano-imprint method. This 3D ITO nanodome structures serve as a window layer of photo-reactive Si semiconductor material. The ITO nanodome photodetector provided remarkably high photoresponses for broad wavelengths (λs) of light by 77588.45% at λ=400 nm, 162192% at λ=600 nm, and 5615.30% at λ=1100 nm. The ITO nanodome design is significantly effective to resolve the light-absorption limit of Si materials for short and long λs. We can suggest an efficient design scheme of Si-based photodetectors." @default.
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- W1971466561 date "2015-06-01" @default.
- W1971466561 modified "2023-10-18" @default.
- W1971466561 title "Three-dimensional nanodome-printed transparent conductors for high-performing Si photodetectors" @default.
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- W1971466561 doi "https://doi.org/10.1016/j.matlet.2015.02.090" @default.
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