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- W1971559172 abstract "Transparent and conductive Al-doped ZnO films have been deposited at room temperature by oxygen radical-assisted pulsed laser deposition. An average optical transmittance of more than 86% (0.7 μm film thickness) in the wavelength range 400–800 nm and resistivity as low as 5×10−4 Ω cm were obtained from films deposited using a radical oxygen source. The surface roughness of the ZnO films measured by means of atomic force microscopy was found to be below 1 nm, suggesting that soft deposition techniques with low kinetic energy sources can make possible the deposition of high-quality transparent conducting ZnO films, even at room temperature." @default.
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- W1971559172 date "2002-12-01" @default.
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- W1971559172 title "Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition" @default.
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- W1971559172 doi "https://doi.org/10.1016/s0040-6090(02)00965-3" @default.
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