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- W1971639174 abstract "We studied the optical properties of InAs/GaAs0.83Sb0.17 quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d = 0.5, 1, and 2 nm), using photoluminescence (PL) measurements. Compared with the undoped QDs, the PL peak energies of the ground state (GS) emissions for the doped QDs with d = 0.5 and 2 nm were found to be greatly blueshifted by ∼31 meV, which was much larger than that for the doped QDs with d = 1 nm. The radiative recombination rate of the GS emissions for the doped QDs with d = 1 nm was estimated to be slower than that for the other doped QDs at 10 K. The doped QDs with d = 1 nm showed the fastest redshift of the GS peak energy with temperature and lowest thermal activation energy (151 meV) of electrons among the QD samples. Further, the time-resolved PL data revealed that the average carrier lifetime (6.3 ns) in the doped QDs with d = 1 nm was longer even than that in the undoped QDs (5.5 ns) because of the weakened electron-hole wavefunction overlap by the V-shaped potential barrier in the doped QDs." @default.
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- W1971639174 date "2015-01-08" @default.
- W1971639174 modified "2023-09-26" @default.
- W1971639174 title "Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots" @default.
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- W1971639174 doi "https://doi.org/10.1088/0268-1242/30/3/035006" @default.
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