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- W1971738963 abstract "This chapter discusses low-dimensional structures of II–VI diluted magnetic semiconductors (DMS) with manganese and describes the carrier concentration induced ferromagnetism in Mn-based IV–VI DMS with a particular emphasis on Mn content and conducting hole concentration dependent paramagnetic–ferromagnetic–spin glass transitions in bulk crystals and thin layers of SnMnTe and related materials. The chapter also discusses the transport, magnetic, and optical properties of bulk crystals and thick epitaxial layers; low-dimensional quantum structures of IV–VI DMS with Eu; the magnetic and electrical properties of IV–VI semiconductors with Gd; and the magnetic and optical properties of all semiconductor ferromagnetic multilayers built of ferromagnetic EuS and nonmagnetic IV–VI (PbSe and PbS) semiconductors. The chapter describes DMS containing transition metals other than manganese. These materials never attracted as much attention as the ones containing Mn, mainly because of severe difficulties in their preparation, particularly when large percentages of the magnetic components were involved." @default.
- W1971738963 created "2016-06-24" @default.
- W1971738963 creator A5026001271 @default.
- W1971738963 creator A5059574147 @default.
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- W1971738963 date "2003-01-01" @default.
- W1971738963 modified "2023-09-29" @default.
- W1971738963 title "II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures" @default.
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