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• W1971781769 abstract "Abstract We show theoretically that under graded distributions of carrier traps nonlinear drift conduction exhibits diode-like characteristics, whereas at low voltage it exhibits ohmic characteristics that are symmetric with respect to the bias polarity. In shallow-trap dominated cases, the JV relationship of these diode-like characteristics is J  ∝  V m ( J : current, V : voltage, 1 ≤  m  ≤ 2). These characteristics agree well with experiments. The theory reproduces exactly experimental JV characteristics using three free parameters in practice, only one more than that used in standard space charge-limited conduction theories. The results indicate that bulk-limited conduction can exhibit rectifying JV characteristics without relying on surface barriers. In most cases, the coexistence of deep traps with shallow-traps is necessary for the appearance of rectification." @default.
• W1971781769 created "2016-06-24" @default.
• W1971781769 creator A5040900849 @default.
• W1971781769 date "2012-01-01" @default.
• W1971781769 modified "2023-09-25" @default.
• W1971781769 title "Unidirectional bulk conduction under trap density gradient for description of resistance switching" @default.
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• W1971781769 doi "https://doi.org/10.1016/j.ceramint.2011.05.037" @default.
• W1971781769 hasPublicationYear "2012" @default.
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