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• W1971833897 abstract "The multiplicity of fundamental bulk effects with small characteristic dimensions and short times and diversity of their combinations attracts a lot of researcher and industrialist attention in nanoelectronics and photonics to chalcogenide materials. Experimental data presented on dimensional effects of electrical chalcogenide switching (threshold voltage and threshold current dependence on device area and the film thickness), and in phase-change memory (switching, programming and read parameters), are analyzed from the point of view of choice of low dimensional materials with S-NDC and participation of electrical instabilities – high current density filaments. New ways of improving parameters of phase-change devices are proposed together with new criteria of material choice." @default.
• W1971833897 created "2016-06-24" @default.
• W1971833897 creator A5050717074 @default.
• W1971833897 date "2013-06-01" @default.
• W1971833897 modified "2023-09-30" @default.
• W1971833897 title "Dimensionality effects in chalcogenide-based devices" @default.
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• W1971833897 doi "https://doi.org/10.1016/j.physe.2012.11.017" @default.
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