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- W1971947046 abstract "This work links several static and dynamic electrical properties of highly boron-doped polycrystalline silicon thin films (thickness: 0.5 μm) with their fabrication technological parameters and their structural characteristics [transmission electron microscopy (TEM) analysis]. Technological parameters under investigation are the temperature and pressure of low pressure chemical vapor deposition (LPCVD) of the films, and the ion implantation dose. A full factorial experiment is used in order to extract significant technological parameters, according to the electrical parameter under study. Using adapted simple test patterns, static characterization of the thin films (i.e. resistance value, resistance dispersion on 2 inch wafers, and temperature coefficients of resistivity) as well as dynamic characterization (i.e. low frequency noise analysis) are performed. Low frequency noise is proved to be a very powerful tool which provides information on the polycrystalline silicon film structure." @default.
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- W1971947046 date "2001-12-01" @default.
- W1971947046 modified "2023-09-30" @default.
- W1971947046 title "Polycrystalline silicon thin films for microsystems: correlation between technological parameters, film structure and electrical properties" @default.
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- W1971947046 doi "https://doi.org/10.1016/s0040-6090(01)01605-4" @default.
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