FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1971966678> ?p ?o ?g. }

• W1971966678 endingPage "59" @default.
• W1971966678 startingPage "49" @default.
• W1971966678 abstract "High density through silicon via (TSV) is a key in fabricating three-dimensional (3-D) large-scale integration (LSI). We have developed polycrystalline silicon (poly-Si) TSV technology and tungsten (W)/poly-Si TSV technology for 3-D integration. In the poly-Si TSV formation, low-pressure chemical vapor deposition poly-Si heavily doped with phosphorus was conformally deposited into the narrow and deep trench formed in a Si substrate after the surface of Si trench was thermally oxidized. In the W/poly-Si TSV formation, tungsten was deposited into the Si trench by atomic layer deposition method after the poly-Si deposition, where poly-Si was used as a liner layer for W deposition. The 3-D microprocessor test chip, 3-D memory test chip, 3-D image sensor chip, and 3-D artificial retina chip were successfully fabricated by using poly-Si TSV." @default.
• W1971966678 created "2016-06-24" @default.
• W1971966678 creator A5006295728 @default.
• W1971966678 creator A5041535044 @default.
• W1971966678 creator A5059487693 @default.
• W1971966678 date "2009-01-01" @default.
• W1971966678 modified "2023-10-05" @default.
• W1971966678 title "High-Density Through Silicon Vias for 3-D LSIs" @default.
• W1971966678 cites W1605711829 @default.
• W1971966678 cites W1970831471 @default.
• W1971966678 cites W2003157710 @default.
• W1971966678 cites W2007275731 @default.
• W1971966678 cites W2009195513 @default.
• W1971966678 cites W2031579205 @default.
• W1971966678 cites W2033940324 @default.
• W1971966678 cites W2078135655 @default.
• W1971966678 cites W2092077578 @default.
• W1971966678 cites W2096042906 @default.
• W1971966678 cites W2104314803 @default.
• W1971966678 cites W2120149280 @default.
• W1971966678 cites W2129810540 @default.
• W1971966678 cites W2145135695 @default.
• W1971966678 cites W2151613126 @default.
• W1971966678 cites W2153220236 @default.
• W1971966678 cites W2537189011 @default.
• W1971966678 cites W2538857334 @default.
• W1971966678 cites W2541409995 @default.
• W1971966678 doi "https://doi.org/10.1109/jproc.2008.2007463" @default.
• W1971966678 hasPublicationYear "2009" @default.
• W1971966678 type Work @default.
• W1971966678 sameAs 1971966678 @default.
• W1971966678 citedByCount "264" @default.
• W1971966678 countsByYear W19719666782012 @default.
• W1971966678 countsByYear W19719666782013 @default.
• W1971966678 countsByYear W19719666782014 @default.
• W1971966678 countsByYear W19719666782015 @default.
• W1971966678 countsByYear W19719666782016 @default.
• W1971966678 countsByYear W19719666782017 @default.
• W1971966678 countsByYear W19719666782018 @default.
• W1971966678 countsByYear W19719666782019 @default.
• W1971966678 countsByYear W19719666782020 @default.
• W1971966678 countsByYear W19719666782021 @default.
• W1971966678 countsByYear W19719666782022 @default.
• W1971966678 countsByYear W19719666782023 @default.
• W1971966678 crossrefType "journal-article" @default.
• W1971966678 hasAuthorship W1971966678A5006295728 @default.
• W1971966678 hasAuthorship W1971966678A5041535044 @default.
• W1971966678 hasAuthorship W1971966678A5059487693 @default.
• W1971966678 hasConcept C111368507 @default.
• W1971966678 hasConcept C127313418 @default.
• W1971966678 hasConcept C151730666 @default.
• W1971966678 hasConcept C155310634 @default.
• W1971966678 hasConcept C171250308 @default.
• W1971966678 hasConcept C191897082 @default.
• W1971966678 hasConcept C192562407 @default.
• W1971966678 hasConcept C2777289219 @default.
• W1971966678 hasConcept C2779227376 @default.
• W1971966678 hasConcept C2780565262 @default.
• W1971966678 hasConcept C2816523 @default.
• W1971966678 hasConcept C45632049 @default.
• W1971966678 hasConcept C49040817 @default.
• W1971966678 hasConcept C542268612 @default.
• W1971966678 hasConcept C544956773 @default.
• W1971966678 hasConcept C57410435 @default.
• W1971966678 hasConcept C64297162 @default.
• W1971966678 hasConcept C86803240 @default.
• W1971966678 hasConcept C87359718 @default.
• W1971966678 hasConceptScore W1971966678C111368507 @default.
• W1971966678 hasConceptScore W1971966678C127313418 @default.
• W1971966678 hasConceptScore W1971966678C151730666 @default.
• W1971966678 hasConceptScore W1971966678C155310634 @default.
• W1971966678 hasConceptScore W1971966678C171250308 @default.
• W1971966678 hasConceptScore W1971966678C191897082 @default.
• W1971966678 hasConceptScore W1971966678C192562407 @default.
• W1971966678 hasConceptScore W1971966678C2777289219 @default.
• W1971966678 hasConceptScore W1971966678C2779227376 @default.
• W1971966678 hasConceptScore W1971966678C2780565262 @default.
• W1971966678 hasConceptScore W1971966678C2816523 @default.
• W1971966678 hasConceptScore W1971966678C45632049 @default.
• W1971966678 hasConceptScore W1971966678C49040817 @default.
• W1971966678 hasConceptScore W1971966678C542268612 @default.
• W1971966678 hasConceptScore W1971966678C544956773 @default.
• W1971966678 hasConceptScore W1971966678C57410435 @default.
• W1971966678 hasConceptScore W1971966678C64297162 @default.
• W1971966678 hasConceptScore W1971966678C86803240 @default.
• W1971966678 hasConceptScore W1971966678C87359718 @default.
• W1971966678 hasIssue "1" @default.
• W1971966678 hasLocation W19719666781 @default.
• W1971966678 hasOpenAccess W1971966678 @default.
• W1971966678 hasPrimaryLocation W19719666781 @default.
• W1971966678 hasRelatedWork W1598176851 @default.
• W1971966678 hasRelatedWork W1999575527 @default.
• W1971966678 hasRelatedWork W2001419146 @default.
• W1971966678 hasRelatedWork W2006219958 @default.
• W1971966678 hasRelatedWork W2051362955 @default.
• W1971966678 hasRelatedWork W2090265853 @default.
• W1971966678 hasRelatedWork W2104642710 @default.
• W1971966678 hasRelatedWork W2353228394 @default.

• next