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- W1972000248 abstract "The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100–200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry." @default.
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- W1972000248 date "2000-03-01" @default.
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- W1972000248 title "Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy" @default.
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- W1972000248 doi "https://doi.org/10.1016/s0921-5107(99)00511-5" @default.
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